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| NPN Silicon Switching Transistor High DC current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: SMBT 3906 (PNP) q SMBT 3904 Type SMBT 3904 Marking s1A Ordering Code (tape and reel) Q68000-A4416 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 69 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 60 6 200 330 150 - 65 ... + 150 Unit V mA mW C 315 245 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 3904 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 30 V DC current gain IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V1) IC = 50 mA, VCE = 1 V1) IC = 100 mA, VCE = 1 V1) Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 hFE 40 70 100 60 30 VCEsat - - VBEsat 0.65 - - - 0.85 0.95 - - 0.2 0.3 - - - - - - - 300 - - V 40 60 6 - - - - - - - - 50 nA - V Values typ. max. Unit 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBT 3904 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, f = 1 kHz VCC = 3 V, IC = 10 mA, IB1 = 1 mA VBE(off) = 0.5 V Delay time Rise time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Storage time Fall time (see diagrams) fT Cobo Cibo h11e h12e h21e h22e F 300 - - 1 0.5 100 1 - - - - - - - - - - 4 8 10 8 400 40 5 k 10- 4 - S Values typ. max. Unit MHz pF dB td tr tstg tf - - - - - - - - 35 35 200 50 ns ns ns ns Semiconductor Group 3 SMBT 3904 Test circuits Delay and rise time Storage and fall time Semiconductor Group 4 SMBT 3904 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V, normalized Semiconductor Group 5 SMBT 3904 Short-circuit forward current transfer ratio h21e = f (IC) VCE = 10 V, f = 1 MHz Open-circuit output admittance h22e = f (IC) VCE = 10 V, f = 1 MHz Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Semiconductor Group 6 SMBT 3904 Fall time tf = f (IC) Rise time tr = f (IC) Input impedance h11e = f (IC) VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio h12e = f (IC) VCE = 10 V, f = 1 kHz Semiconductor Group 7 |
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